Kornhuber, R. and Roitzsch, R.
(1993)
*Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions.*
International Journal for Numerical Methods in Biomedical Engineering, 9
(3).
pp. 243-250.
ISSN 2040-7947

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1002/cnm.1640090308

## Abstract

The potential distribution of bipolar, strongly reverse-biased pn-junctions can be described by a double obstacle problem for the Laplacian. The problem is solved by a self-adaptive finite-element method involving automatic termination criteria for the iterative solver, local error estimation and local mesh refinement. Special attention is paid to the efficient resolution of the geometries typically arising in semiconductor device simulation. The algorithm is applied to a reverse-biased pn-junction with multistep field plate and stop electrode to illustrate its efficiency and reliability.

Item Type: | Article |
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Subjects: | Mathematical and Computer Sciences > Mathematics > Numerical Analysis |

Divisions: | Department of Mathematics and Computer Science > Institute of Mathematics |

ID Code: | 1918 |

Deposited By: | Ekaterina Engel |

Deposited On: | 23 Jun 2016 20:25 |

Last Modified: | 23 Jun 2016 20:25 |

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