Repository: Freie Universit├Ąt Berlin, Math Department

Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions

Kornhuber, R. and Roitzsch, R. (1993) Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions. International Journal for Numerical Methods in Biomedical Engineering, 9 (3). pp. 243-250. ISSN 2040-7947

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Official URL: http://dx.doi.org/10.1002/cnm.1640090308

Abstract

The potential distribution of bipolar, strongly reverse-biased pn-junctions can be described by a double obstacle problem for the Laplacian. The problem is solved by a self-adaptive finite-element method involving automatic termination criteria for the iterative solver, local error estimation and local mesh refinement. Special attention is paid to the efficient resolution of the geometries typically arising in semiconductor device simulation. The algorithm is applied to a reverse-biased pn-junction with multistep field plate and stop electrode to illustrate its efficiency and reliability.

Item Type:Article
Subjects:Mathematical and Computer Sciences > Mathematics > Numerical Analysis
Divisions:Department of Mathematics and Computer Science > Institute of Mathematics
ID Code:1918
Deposited By: Ekaterina Engel
Deposited On:23 Jun 2016 20:25
Last Modified:23 Jun 2016 20:25

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